ICC published High Impact Factor (4.034), Q1, SCOPUS, Elsevier Journal.
This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.
Publication under the cell
Rahman MM, Kim D-H, Kim T-W. Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress. Nanomaterials. 2020; 10(3):527.
Publication Article Name :
Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress