Principal Investigator & Head of Research Cell:
Md. Mamunur Rahman
The Semiconductor Devices and Nano Science Research Cell (SDMSC) conducts research on semiconductor materials and devices. Materials research includes but is not limited to the doping of semiconductors, grown of III-V compound semiconductor on Si, strain engineering as well as the Atomic Layer Deposition (ALD) of High-k oxides. Besides, the material characterizations of the deposited oxides, the electrical characterizations including analysis and model development for assessment of electrical traps are also performed. Device research includes the fabrication and characterizations of different field effect transistors including dielectric capacitors, MOSFETs, HEMTs, FinFET and TFETs. Analysis methods employed include experimental techniques, analytic theoretical techniques, as well as numerical simulation techniques.
Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress; Md. Mamunur Rahman, Dae-Hyun Kim, and Tae-Woo Kim, Nanomaterials 10(3), 527, 2020. DOI:10.3390/nano10030527 (IF:4.324). Overview: This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.https://doi.org/10.3390/nano10030527